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| BAS16 Vishay Telefunken Silicon Epitaxial Planar Diode Features D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Non repetitive peak reverse voltage Repetitive peak reverse voltage =Working peak reverse voltage =DC Blocking voltage Peak forward surge current tp=1s g tp=1ms Average forward current half wave rectification with resistive load and f 50 MHz, on ceramic substrate 8mmx10mmx0.7mm Forward current on ceramic substrate 8mmx10mmx0.7mm Power dissipation on ceramic substrate 8mmx10mmx0.7mm Junction and storage temperature range Symbol VRM VRRM =VRWM =VR IFSM IFSM IFAV Value 100 75 Unit V V 1 2 150 A A mA IF Ptot Tj=Tstg 300 350 -55...+150 mA mW C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on ceramic substrate 8mmx10mmx0.7mm Symbol RthJA Value 357 Unit K/W Document Number 85539 Rev. 1, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BAS16 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=75V, Tj=150C VR=25V, Tj=150C VR=0, f=1MHz IF=10mA to IR=1mA, VR=6V, RL=100W Symbol VF VF VF VF IR IR IR CD trr Min Typ Max 715 855 1 1.25 1 50 30 4 6 Unit mV mV V V Reverse current mA mA mA pF ns Diode capacitance Reverse recovery time Characteristics (Tj = 25_C unless otherwise specified) 1000 IF - Forward Current ( mA ) 10000 VR = 20 V 100 Tj = 100C 10 Tj = 25C 1 0.1 IR - Reverse Current ( nA ) 1000 100 10 0.01 0 14356 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 14357 0 25 50 75 100 125 150 175 200 Tj - Junction Temperature ( C ) Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Junction Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 85539 Rev. 1, 01-Apr-99 BAS16 Vishay Telefunken Dimensions in mm top view 14370 Case: SOT23, plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: cathode band Marking: KA6 Approx. weight: SOT23 0.008 grams Document Number 85539 Rev. 1, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BAS16 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 85539 Rev. 1, 01-Apr-99 |
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